Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well

Abstract

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak anti-localization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g-factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

10 pages, 7 figures

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Cited by in corpus (5)

• Eliashberg theory for dynamical screening in bilayer exciton condensation
• Quantum transport in an ambipolar InSb nanowire quantum dot device
• Heavy-hole spin relaxation in quantum dots: Isotropic versus anisotropic effects
• Impact of Layer Structure and Strain on Morphology and Electronic Properties of InAs Quantum Wells on InP (001)
• Spin splitting, Kondo correlation and singlet-doublet quantum phase transition in a superconductor-coupled InSb nanosheet quantum dot