Record-quality GaAs two-dimensional hole systems

Abstract

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as $5.8\times 10^6$ cm${}^2$/Vs at a hole density of $p=1.3\times 10^{11}$ /cm${}^2$, implying a mean-free path of $\simeq 27$ $\mu$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $\nu =12/25$ near $\nu =1/2$. Furthermore, we see a deep minimum develop at $\nu =1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times 10^{10}$ /cm${}^2$ where we measure a mobility of $3.6\times 10^6$ cm${}^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure.

arXiv comment9 pages, 4 figures

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• Even-Denominator Fractional Quantum Hall State at Filling Factor ν = 3/4
• Fractional Quantum Hall State at Filling Factor $\nu =1/4$ in Ultra-High-Quality GaAs 2D Hole Systems
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Highly-Anisotropic Even-Denominator Fractional Quantum Hall State in an Orbitally-Coupled Half-Filled Landau Level
• Ultraclean two-dimensional hole systems with mobilities exceeding 10${}^7$ cm${}^2$/Vs
• Competing Many-Body Phases at Small Fillings in Ultrahigh-Quality GaAs 2D Hole Systems: Role of Landau Level Mixing
• Quadrupolar photovoltaic effect in the terahertz range in a two-dimensional spin-3/2 hole system
• Even-denominator fractional quantum Hall states with spontaneously broken rotational symmetry
• Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas