Record-quality GaAs two-dimensional hole systems

Abstract

The complex band structure, large spin-orbit induced band splitting, and heavy effective mass of two-dimensional (2D) hole systems hosted in GaAs quantum wells render them rich platforms to study many-body physics and ballistic transport phenomena. Here we report ultra-high-quality (001) GaAs 2D hole systems, fabricated using molecular beam epitaxy and modulation doping, with mobility values as high as $5.8\times 10^6$ cm${}^2$/Vs at a hole density of $p=1.3\times 10^{11}$ /cm${}^2$, implying a mean-free path of $\simeq 27$ $\mu$m. In the low-temperature magnetoresistance trace of this sample, we observe high-order fractional quantum Hall states up to the Landau level filling $\nu =12/25$ near $\nu =1/2$. Furthermore, we see a deep minimum develop at $\nu =1/5$ in the magnetoresistance of a sample with a much lower hole density of $p=4.0\times 10^{10}$ /cm${}^2$ where we measure a mobility of $3.6\times 10^6$ cm${}^2$/Vs. These improvements in sample quality were achieved by reduction of residual impurities both in the GaAs channel and the AlGaAs barrier material, as well as optimization in design of the sample structure.

9 pages, 4 figures

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