Effect of strain on stripe phases in the Quantum Hall regime

Abstract

Spontaneous breaking of rotational symmetry and preferential orientation of stripe phases in the quantum Hall regime has attracted considerable experimental and theoretical effort over the last decade. We demonstrate experimentally and theoretically that the direction of high and low resistance of the two-dimensional (2D) hole gas in the quantum Hall regime can be controlled by an external strain. Depending on the sign of the in-plane shear strain, the Hartree-Fock energy of holes or electrons is minimized when the charge density wave (CDW) is oriented along [110] or [1-10] directions. We suggest that shear strains due to internal electric fields in the growth direction are responsible for the observed orientation of CDW in pristine electron and hole samples.

10 pages, 3 figures

References in corpus (5)

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• High mobility two-dimensional hole system in GaAs/AlGaAs quantum wells grown on (100) GaAs substrates
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