Strong Transport Anisotropy in a Ge/SiGe Quantum Well in Tilted Magnetic Fields

Abstract

We report on a strong transport anisotropy in a 2D hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed $3\times 10^4$. The anisotropy occurs in a wide range of filling factors where it is determined {\em primarily} by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.

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Cited by in corpus (7)

• Spinless composite fermions in an ultra-high quality strained Ge quantum well
• Reorientation of quantum Hall stripes within a partially filled Landau level
• The emergent linear Rashba spin-orbit coupling offering the fast manipulation of hole-spin qubits in germanium
• Gate-defined Two-dimensional Hole and Electron Systems in an Undoped InSb Quantum Well
• Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
• Anomalous coupling between magnetic and nematic orders in quantum Hall systems
• Lateral Mn5Ge3 spin-valve in contact with a high-mobility Ge two-dimensional hole gas