Anisotropic Fermi Contour of (001) GaAs Electrons in Parallel Magnetic Fields

Abstract

We demonstrate a severe Fermi contour anisotropy induced by the application of a parallel magnetic field to high-mobility electrons confined to a 30-nm-wide (001) GaAs quantum well. We study commensurability oscillations, namely geometrical resonances of the electron orbits with a unidirectional, surface-strain-induced, periodic potential modulation, to directly probe the size of the Fermi contours along and perpendicular to the parallel field. Their areas are obtained from the Shubnikov-de Haas oscillations. Our experimental data agree semi-quantitatively with the results of parameter-free calculations of the Fermi contours but there are significant discrepancies.

5 pages, 5 figures

References in corpus (1)

• Ballistic transport of (001) GaAs 2D holes through a strain-induced lateral superlattice

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