Hall field-induced resistance oscillations in Ge/SiGe quantum wells

Abstract

We report on a magnetotransport study in a high-mobility 2D hole gas hosted in a pure Ge/SiGe quantum well subject to dc electric fields and high frequency microwave radiation. We find that under applied dc bias the differential resistivity exhibits a pronounced maximum at a magnetic field which increases linearly with the applied current. We associate this maximum with the fundamental peak of Hall field-induced resistance oscillations (HIRO) which are known to occur in 2D electron gases in GaAs/AlGaAs systems. After taking into account the Dingle factor correction, we find that the position of the HIRO peak is well described by the hole effective mass $m^{\star }\approx 0.09m_0$, obtained from microwave photoresistance in the same sample.

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• Strong Transport Anisotropy in a Ge/SiGe Quantum Well in Tilted Magnetic Fields
• Microwave Photoresistance in an Ultrahigh Quality GaAs Quantum Well
• Hall field-induced resistance oscillations in a tunable-density GaAs quantum well
• Graphene's non-equilibrium fermions reveal Doppler-shifted magnetophonon resonances accompanied by Mach supersonic and Landau velocity effects
• Effect of Berry Phase on Nonlinear Response of Two-dimensional Fermions
• Effect of Landau quantization on linear magnetoresistance of periodically modulated two-dimensional electron gas
• Microwave-induced zero-resistance states in a high-mobility two-subband electron system
• Transport anisotropy in Ge quantum wells in the absence of quantum oscillations
• Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
• Bloch-Grüneisen nonlinearity of electron transport in GaAs/AlGaAs heterostructures
• Effect of density on microwave-induced resistance oscillations in back-gated GaAs quantum wells
• Giant tunable magnetoresistance of electrically gated graphene ribbon with lateral interface under magnetic field
• Bound states induced giant oscillations of the conductance in the quantum Hall regime