Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias
arXiv:1708.09841 · doi:10.1103/PhysRevB.96.125401
Abstract
We report on magnetotransport properties of a MgZnO/ZnO heterostructure subjected to weak direct currents. We find that in the regime of overlapping Landau levels, the differential resistivity acquires a quantum correction proportional to both the square of the current and the Dingle factor. The analysis shows that the correction to the differential resistivity is dominated by a current-induced modification of the electron distribution function and allows us to access both quantum and inelastic scattering rates.
4 pages, 3 figures
References in corpus (10)
- Theory of microwave-induced oscillations in the magnetoconductivity of a 2D electron gas
- Magnetotransport in a two-dimensional electron system in dc electric fields
- Non-linear Resistivity of a Two-Dimensional Electron Gas in a Magnetic Field
- Zero differential resistance state of two dimensional electron systems in strong magnetic fields
- Temperature Dependence of Microwave Photoresistance in 2D Electron Systems
- Role of electron-electron interactions in nonlinear transport in 2D electron systems
- Nonlinear resistance of 2D electrons in crossed electric and magnetic fields
- Zero differential resistance in two-dimensional electron systems at large filling factors
- Hall field-induced resistance oscillations in Ge/SiGe quantum wells
- Hall field-induced resistance oscillations in MgZnO/ZnO heterostructures