Evidence for zero-differential resistance states in electronic bilayers
arXiv:1101.5104 · doi:10.1103/PhysRevB.83.041306
Abstract
We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity which leads to formation of current domains in our sample, similar to the case of single-layer systems.
4 pages, 4 figures
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- Phase of phonon-induced resistance oscillations in a high-mobility two-dimensional electron gas
- Magneto-intersubband resistance oscillations in GaAs quantum wells placed in a tilted magnetic field
- Inter-subband resistance oscillations in crossed electric and magnetic fields
- Quantum oscillations of dissipative resistance in crossed electric and magnetic fields
- Hall field-induced resistance oscillations in a tunable-density GaAs quantum well
- Resistance oscillations of two-dimensional electrons in crossed electric and tilted magnetic fields
- Microwave-induced Hall resistance in bilayer electron systems
- Nonlinear response of a MgZnO/ZnO heterostructure close to zero bias