Microwave zero-resistance states in a bilayer electron system
arXiv:1007.1393 · doi:10.1103/PhysRevLett.105.026804
Abstract
Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power. and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.
5 pages, 4 figures
References in corpus (7)
- Theory of microwave-induced oscillations in the magnetoconductivity of a 2D electron gas
- Microwave photoconductivity of a 2D electron gas: Mechanisms and their interplay at high radiation power
- Interference oscillations of microwave photoresistance in double quantum wells
- Resonance oscillations of magnetoresistance in double quantum wells
- Are Microwave Induced Zero Resistance States Necessarily Static?
- Influence of contacts on the microwave response of a two-dimensional electron stripe
- Microwave magnetoplasmon absorption by a 2DEG stripe