Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect

Abstract

We report on a theoretical insight about the microwave-induced resistance oscillations and zero resistance states when dealing with p-type semiconductors and holes instead of electrons. We consider a high-mobility two-dimensional hole gas hosted in a pure Ge/SiGe quantum well. Similarly to electrons we obtain radiation-induce resistance oscillations and zero resistance states. We analytically deduce a universal expression for the irradiated magnetoresistance, explaining the origin of the minima positions and their $1/4$ cycle phase shift. The outcome is that these phenomena are universal and only depend on radiation and cyclotron frequencies. We also study the possibility of having simultaneously two different carriers driven by radiation: light and heavy holes. As a result the calculated magnetoresistance reveals an interference profile due to the different effective masses of the two types of carriers.

9 pages and 9 figures

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Cited by in corpus (4)

• Linear polarization study of microwave-radiation-induced magnetoresistance oscillations: Comparison of power dependence to theory
• Evidence of radiation-driven Landau states in 2D electron systems: magnetoresistance oscillations phase shift
• Radiation-induced magnetoresistance oscillations with massive Dirac fermions
• Resonance peak shift in the photo-current of ultrahigh-mobility two-dimensional electron systems