Photo-excited zero-resistance states in the GaAs/AlGaAs system

Abstract

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B=[4/(4j+1)]B_f$, where $B_f=2\pi \text{f}{m}^{\ast }/e$, m${}^{\ast }$ is an effective mass, e is the charge, and \textit{f} is the microwave frequency. Here, we summarize some experimental results.

7 color figures, 5 pages