Photo-excited zero-resistance states in the GaAs/AlGaAs system

Abstract

The microwave-excited high mobility two-dimensional electron system exhibits, at liquid helium temperatures, vanishing resistance in the vicinity of $B=[4/(4j+1)]B_f$, where $B_f=2\pi \text{f}{m}^{\ast }/e$, m${}^{\ast }$ is an effective mass, e is the charge, and \textit{f} is the microwave frequency. Here, we summarize some experimental results.

arXiv comment7 color figures, 5 pages

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Cited by in corpus (9)

• Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/A{l}_{x}G{a}_{1-x}As$ devices
• Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
• Microwave-induced resistance oscillations and zero-resistance states in 2D electron systems with two occupied subbands
• Radiation-induced resistance oscillations in a 2D hole gas: a demonstration of a universal effect
• Evidence of radiation-driven Landau states in 2D electron systems: magnetoresistance oscillations phase shift
• Radiation-induced magnetoresistance oscillations with massive Dirac fermions
• Resonance peak shift in the photo-current of ultrahigh-mobility two-dimensional electron systems
• Multiple photoexcitation of two-dimensional electron systems: bichromatic magnetoresistance oscillations revisited
• Frequency-dependent polarization-angle-phase-shift in the microwave-induced magnetoresistance oscillations