Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

Abstract

We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a $f$-independent 1/4 cycle phase shift with respect to the $hf=j\hslash {\omega }_c$ condition for $j\ge 1$, and they also suggest a small ($\approx$ 2%) reduction in the effective mass ratio, $m^{\ast }/m$, with respect to the standard value for GaAs/AlGaAs devices.

4 pages, 4 color figures