activity
20032010
most citedDemonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices

174 citations · 1k across the 17 of their papers we have counts for

collaborators

17 papers

cond-mat.mtrl-sci2010★ 155 cited

Hall carrier density and magnetoresistance measurements in thin film vanadium dioxide across the metal-insulator transition

Dmitry Ruzmetov, Don Heiman, Bruce B. Claflin +2

Temperature dependent magneto-transport measurements in magnetic fields of up to 12 Tesla were performed on thin film vanadium dioxide (VO2) across the metal-insulator transition (…

cond-mat.mtrl-sci2010★ 160 cited

Three-terminal field effect devices utilizing thin film vanadium oxide as the channel layer

Dmitry Ruzmetov, Gokul Gopalakrishnan, Changhyun Ko +2

Electrostatic control of the metal-insulator transition (MIT) in an oxide semiconductor could potentially impact the emerging field of oxide electronics. Vanadium dioxide is of par…

cond-mat.mes-hall2009★ 71 cited

Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect

R. G. Mani, W. B. Johnson, V. Umansky +2

We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, . At large-, the dark study i…

cond-mat.mes-hall2009★ 26 cited

Bandgap and Band Offsets Determination of Semiconductor Heterostructures using Three-terminal Ballistic Carrier Spectroscopy

Wei Yi, Hong Lu, Yong Huang +5

Utilizing three-terminal tunnel emission of ballistic electrons and holes, we have developed a method to self-consistently measure the bandgap of semiconductors and band discontinu…

cond-mat.other2007★ 22 cited

A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

Mariano A. Zimmler, Jiming Bao, Ilan Shalish +3

We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both…

cond-mat.other2007★ 28 cited

Electroluminescence from single nanowires by tunnel injection: an experimental study

Mariano A. Zimmler, Jiming Bao, Ilan Shalish +4

We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the…