Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices
arXiv:cond-mat/0310474 · doi:10.1103/PhysRevB.69.161306
Abstract
We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification in the Hall effect upon irradiation is characterized by (a) a small reduction in the slope of the Hall resistance curve with respect to the dark value, (b) a periodic reduction in the magnitude of the Hall resistance, , that correlates with an increase in the diagonal resistance, , and (c) a Hall resistance correction that disappears as the diagonal resistance vanishes.
arXiv comment4 pages text, 4 color figures
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