174 citations · 643 across the 10 of their papers we have counts for
10 papers
The Microwave Hall Effect
J. E. Coppock, J. R. Anderson, W. B. Johnson
This paper describes a simple microwave apparatus to measure the Hall effect in semiconductor wafers. The advantage of this technique is that it does not require contacts on the sa…
Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani, W. B. Johnson, V. Umansky +2
We report the experimental results from a dark study and a photo-excited study of the high mobility GaAs/AlGaAs system at large filling factors, . At large-, the dark study i…
Phase study of oscillatory resistances in high mobility GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
R. G. Mani, W. B. Johnson, V. Umansky +2
An experimental study of the high mobility GaAs/AlGaAs system at large- indicates several distinct phase relations between the oscillatory diagonal- and Hall- resistances, and s…
Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures
R. G. Mani
We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic field…
Demonstration of a 1/4 cycle phase shift in the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices
R. G. Mani, J. H. Smet, K. von Klitzing +3
We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Reso…
Radiation induced oscillatory Hall effect in high mobility GaAs/AlGaAs devices
R. G. Mani, V. Narayanamurti, K. von Klitzing +3
We examine the radiation induced modification of the Hall effect in high mobility GaAs/AlGaAs devices that exhibit vanishing resistance under microwave excitation. The modification…