Zero-Resistance States Induced by Electromagnetic-Wave Excitation in GaAs/AlGaAs Heterostructures

Abstract

We report the detection of novel zero-resistance states induced by electromagnetic wave excitation in ultra high mobility GaAs/AlGaAs heterostructure devices, at low magnetic fields, $B$, in the large filling factor limit. Vanishing resistance is observed in the vicinity of $B=[4/(4j+1)]B_f$, where $B_f=2\pi \text{f}{m}^{\ast }/e$, where m${}^{\ast }$ is the effective mass, e is the charge, and \textit{f} is the microwave frequency. The dependence of the effect is reported as a function of \textit{f}, the temperature, and the power.

Proc. EP2DS-15 [Nara (Japan), 14-18 July 2003]; 5 Pages, 10 Color Figures