Spin characterization and control over the regime of radiation-induced zero-resistance states
arXiv:cond-mat/0407143 · doi:10.1109/TNANO.2004.840147
Abstract
Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.
IEEE Transactions in Nanotechnology (to be published); 10 pages, 10 color figures
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Cited by in corpus (3)
- Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations
- Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
- Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect