Spin characterization and control over the regime of radiation-induced zero-resistance states

Abstract

Over the regime of the radiation-induced zero-resistance states and associated oscillatory magnetoresistance, we propose a low magnetic field analog of quantum-Hall-limit techniques for the electrical detection of electron spin- and nuclear magnetic- resonance, dynamical nuclear polarization via electron spin resonance, and electrical characterization of the nuclear spin polarization via the Overhauser shift. In addition, beats observed in the radiation-induced oscillatory-magnetoresistance are developed into a method to measure and control the zero-field spin splitting due to the Bychkov-Rashba and bulk inversion asymmetry terms in the high mobility GaAs/AlGaAs system.

arXiv commentIEEE Transactions in Nanotechnology (to be published); 10 pages, 10 color figures

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Cited by in corpus (7)

• Radiation-induced oscillatory-magnetoresistance in a tilted magnetic field in $GaAs/A{l}_{x}G{a}_{1-x}As$ devices
• Nonlinear growth with the microwave intensity in radiation-induced magnetoresistance oscillations
• Observation of linear-polarization-sensitivity in the microwave-radiation-induced magnetoresistance oscillations
• Phase study of oscillatory resistances in microwave-irradiated- and dark- GaAs/AlGaAs devices: Indications of a new class of integral quantum Hall effect
• Sub-linear radiation power dependence of photo-excited resistance oscillations in two-dimensional electron systems
• Microwave-induced electron heating in the regime of radiation-induced magnetoresistance oscillations
• Quantum and classical surface acoustic wave induced magnetoresistance oscillations in a 2D electron gas