Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures

Abstract

We study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The spin dynamics is controlled by the spin-orbit interaction, which arises via the Dresselhaus (bulk asymmetry) and Rashba (well asymmetry) mechanisms. This interaction, owing to its momentum dependence, causes rotation of the spin polarization vector, and also produces effective spin dephasing. The density matrix approach is used to describe the evolution of the electron spin polarization, while the spatial motion of the electrons is treated semiclassically. Monte Carlo simulations have been carried out for temperatures in the range 77-300 K.

23 pages

References in corpus (6)

• Diffuse transport and spin accumulation in a Rashba two-dimensional electron gas
• Spin diffusion and injection in semiconductor structures: Electric field effects
• Spin diffusion at finite electric and magnetic fields
• Kinetic theory of spin transport in n-typed semiconductor quantum wells
• Electron Spin Relaxation in a Semiconductor Quantum Well
• Monte Carlo Simulation of Spin-Polarized Transport

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