Monte Carlo Simulation of Spin-Polarized Transport
arXiv:cond-mat/0302395 · doi:10.1007/3-540-44843-8_95
Abstract
Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The spin-orbit interaction terms generate coherent evolution of the electron spin polarization and also cause dephasing. The spatial motion of the electrons is treated semiclassically. Three different scattering mechanisms--optical phonons, acoustic phonons and ionized impurities--are considered. The electric field is calculated self-consistently from the charge distribution. The Monte Carlo scheme is described, and simulation results are reported for temperatures in the range 77-300 K.
11 pages, 4 figures
References in corpus (6)
- Spin diffusion and injection in semiconductor structures: Electric field effects
- Spin-current modulation and square-wave transmission through periodically stubbed electron waveguides
- Theory of spin-polarized bipolar transport in magnetic p-n junctions
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Cited by in corpus (6)
- Anisotropic transport in the two-dimensional electron gas in the presence of spin-orbit coupling
- Dissipation effects in spin-Hall transport of electrons and holes
- Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures
- Drift-Diffusion Approach to Spin-Polarized Transport
- Dynamics of Spin Relaxation near the Edge of Two-Dimensional Electron Gas
- Influence of Nuclear Spin Polarization on Quantum Wire Conductance