Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

Abstract

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.

3 pages, 2 figures, Replaced with revised version

References in corpus (2)

• Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
• Ferromagnetic imprinting of spin polarization in a semiconductor

Cited by in corpus (21)

• Spintronics: Fundamentals and applications
• Semiconductor Spintronics
• Magnetic bipolar transistor
• Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures
• Two-dimensional hole precession in an all-semiconductor spin field effect transistor
• Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping
• Spin transference and magnetoresistance amplification in a transistor
• A class of spin injection-precession ultrafast nanodevices
• Modeling for Semiconductor Spintronics
• Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots
• Monte Carlo Modeling of Spin FETs Controlled by Spin-Orbit Interaction
• Voltage control of nuclear spin in ferromagnetic Schottky diodes
• Bipolar spintronics: From spin injection to spin-controlled logic
• Theory of Spin Transport Induced by Ferromagnetic Proximity On a Two-Dimensional Electron Gas
• Electric readout of magnetization dynamics in a ferromagnet-semiconductor system
• Monte Carlo Simulation of Spin-Polarized Transport
• Optically-Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction
• The Silicon Inversion Layer With A Ferromagnetic Gate: A Novel Spin Source
• Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current
• Propagation of Spin-Polarized Electrons Through Interfaces Separating Differently Doped Semiconductor Regions
• Electrical expression of spin accumulation in ferromagnet/semiconductor structures