Optically-Induced Suppression of Spin Relaxation in Two-Dimensional Electron Systems with Rashba Interaction

Abstract

A pulsed technique for electrons in 2D systems, in some ways analogous to spin echo in nuclear magnetic resonance, is discussed. We show that a sequence of optical below-band gap pulses can be used to suppress the electron spin relaxation due to the D'yakonov-Perel' spin relaxation mechanism. The spin relaxation time is calculated for several pulse sequences within a Monte Carlo simulation scheme. The maximum of spin relaxation time as a function of magnitude/width of the pulses corresponds to $\pi$-pulse. It is important that even relatively distant pulses efficiently suppress spin relaxation.

References in corpus (8)

• High temperature spin dephasing in n-typed GaAs quantum wells
• Hot-electron effect in spin dephasing in $n$-type GaAs quantum wells
• Semiclassical Monte Carlo Model for In-Plane Transport of Spin-Polarized Electrons in III-V Heterostructures
• Focusing of Spin Polarization in Semiconductors by Inhomogeneous Doping
• Drift-Diffusion Approach to Spin-Polarized Transport
• Long-Lived Spin Coherence States
• Slow Spin Relaxation in Two-Dimensional Electron Systems with Antidots
• Dynamics of Spin Relaxation near the Edge of Two-Dimensional Electron Gas

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• Hydrodynamic model for relaxation of optically injected currents in quantum wells
• Kinetics of Spin Relaxation in Wires and Channels: Boundary Spin Echo and Tachyons
• Nonexponential spin decay in a quantum kinetic description of the D'yakonov-Perel' mechanism mediated by impurity scattering
• Impurity-driven intervalley spin-flip scattering-induced 2D spin relaxation in silicon
• Dynamics of Spin Relaxation in Finite-Size 2D Systems: an Exact Solution
• Electron spin rephasing in $n$-type (001) GaAs quantum wells