Magnetic bipolar transistor
arXiv:cond-mat/0307014 · doi:10.1063/1.1637954
Abstract
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.
4 pages, 2 figures
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- Microscopic mechanism of high-temperature ferromagnetism in Fe, Mn, and Cr-doped InSb, InAs, and GaSb magnetic semiconductors
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- Modeling for Semiconductor Spintronics
- Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
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- Are spin junction transistors suitable for signal processing?
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- Gate-tunable spin exclusive or operation in a silicon-based spin device at room temperature
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- Disorder effects on resonant tunneling transport in GaAs/(Ga,Mn)As heterostructures
- Electrical expression of spin accumulation in ferromagnet/semiconductor structures