Modulation of spin dynamics in a channel of a non-ballistic spin field effect transistor

Abstract

We have investigated the effect of the gate voltage on spin relaxation in an Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As heterostructure. The study is motivated by a recent proposal for a non-ballistic spin field effect transistor that utilizes the interplay between the Rashba and the Dresselhaus spin-orbit interaction in the device channel. The model, which utilizes real material parameters, in order to calculate spin dynamics as a function of the gate voltage has been developed. From the obtained results we define the efficiency of the spin polarization and spin density modulation. The estimated modulation of the spin polarization at room temperature is of the order of 15-20%. The results show that the effect is not sufficient for device applications. However, it can be observed experimentally by optical pulse-probe techniques.

9 pages

References in corpus (3)

• Magnetic bipolar transistor
• Radiation-induced oscillatory magnetoresistance as a sensitive probe of the zero-field spin splitting in high mobility GaAs/AlGaAs devices
• Drift-Diffusion Approach to Spin-Polarized Transport

Cited by in corpus (4)

• Anisotropic spin transport in GaAs quantum wells in the presence of competing Dresselhaus and Rashba spin-orbit-coupling strengths
• Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
• Spin-photovoltaic effect in quantum wires due to inter-subband transitions
• Monte Carlo simulations of spin transport in nanoscale In${}_{0.7}$Ga${}_{0.3}$As transistors: Temperature and size effects