The spin-torque transistor

Abstract

A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure-drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin-valve. The device can operate at room temperature, but in order to be useful, ferromagnetic materials with polarizations close to unity are required.

to be published in Applied Physics Letters

References in corpus (8)

• Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
• Anatomy of Spin-Transfer Torque
• Finite-element theory of transport in ferromagnet-normal metal systems
• The Role of Spin-Dependent Interface Scattering in Generating Current-Induced Torques in Magnetic Multilayers
• Spin Torques in Ferromagnetic/Normal Metal Structures
• Unipolar spin diodes and transistors
• Theory of spin-polarized bipolar transport in magnetic p-n junctions
• Universal angular magnetoresistance and spin torque in ferromagnetic/normal metal hybrids

Cited by in corpus (14)

• Spintronics: Fundamentals and applications
• Magnetic bipolar transistor
• Current-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures
• Interplay between ferromagnetism and superconductivity in tunneling currents
• Perpendicular spin valves with ultra-thin ferromagnetic layers
• Tunneling currents in ferromagnetic systems with multiple broken symmetries
• Detection of spin reversal and nutations through current measurements
• Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations
• Subnanosecond switching of local spin-exchange coupled to ferromagnets
• Magnetoelectronic Spin Echo
• Current-controlled magnetization dynamics in the spin-flip transistor
• Spin torque transistor revisited
• Magneto shot noise in noncollinear diffusive spin-valves
• Quantum Spin Tomography in Ferromagnet-Normal Conductors