Dynamics of thin-film spin-flip transistors with perpendicular source-drain magnetizations

Abstract

A "spin-flip transistor" is a lateral spin valve consisting of ferromagnetic source drain contacts to a thin-film normal-metal island with an electrically floating ferromagnetic base contact on top. We analyze the \emph{dc}-current-driven magnetization dynamics of spin-flip transistors in which the source-drain contacts are magnetized perpendicularly to the device plane by magnetoelectronic circuit theory and the macrospin Landau-Lifshitz-Gilbert equation. Spin flip scattering and spin pumping effects are taken into account. We find a steady-state rotation of the base magnetization at GHz frequencies that is tuneable by the source-drain bias. We discuss the advantages of the lateral structure for high-frequency generation and actuation of nanomechanical systems over recently proposed nanopillar structures.

Accepted by Phys.Rev.B as regular article

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• Generation of microwave radiation in planar spin-transfer devices
• Easy-plane spin Hall oscillator
• Planar approximation for the frequencies of spin transfer oscillators
• Effective attraction induced by repulsive interaction in a spin-transfer system
• Current-controlled magnetization dynamics in the spin-flip transistor
• Uniform magnetization dynamics of a submicron ferromagnetic coin driven by the spin-orbit coupled spin torque