Current-controlled magnetization dynamics in the spin-flip transistor
arXiv:cond-mat/0601632 · doi:10.1143/JJAP.45.3863
Abstract
The current driven magnetization dynamics of a thin-film, three magnetic terminal device (spin-flip transistor) is investigated theoretically. We consider a magnetization configuration in which all magnetizations are in the device plane, with source-drain magnetizations chosen fixed and antiparallel, whereas the third contact magnetization is allowed to move in a weak anisotropy field that guarantees thermal stability of the equilibrium structure at room temperature. We analyze the magnetization dynamics of the free layer under a dc source-drain bias current within the macrospin model and magneto-electronic circuit theory. A new tunable two-state behavior of the magnetization is found and the advantages of this phenomenon and potential applications are discussed.
Accepted by JJAP special issue on Magnetization Dynamics in Spintronic Structures and Devices
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Cited by in corpus (5)
- Current-driven ferromagnetic resonance, mechanical torques and rotary motion in magnetic nanostructures
- Generation of microwave radiation in planar spin-transfer devices
- Invariant form of spin-transfer switching condition
- Effective attraction induced by repulsive interaction in a spin-transfer system
- Anomalous stabilization in a spin-transfer system at high spin polarization