Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current

Abstract

We consider electron tunneling from a nonmagnetic $n$-type semiconductor ($n$-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient extraction of electron spin from a thin $n$-S layer near FM-S interface at low spin polarization of the current. We show that this effect can be used for an efficient polarization radiation source in a heterostructure where the accumulated spin polarized electrons are injected from $n$-S and recombine with holes in a quantum well. The radiation polarization depends on a bias voltage applied to the FM-S junction.

4 pages, 2 figures

References in corpus (16)

• Spintronics: Fundamentals and applications
• Basic obstacle for electrical spin-injection from a ferromagnetic metal into a diffusive semiconductor
• Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
• How to calculate the degree of spin polarization in ferromagnets?
• Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
• General Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers
• Spin diffusion and injection in semiconductor structures: Electric field effects
• An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device
• Electron Spin Injection at a Schottky Contact
• Ballistic Spin Injection from Fe(001) into ZnSe and GaAs
• Spontaneous Spin Coherence in n-GaAs Produced by Ferromagnetic Proximity Polarization
• Ferromagnetic imprinting of spin polarization in a semiconductor
• Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates
• A class of spin injection-precession ultrafast nanodevices
• Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
• High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins

Cited by in corpus (1)

• Spin dynamics in semiconductors