High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins
arXiv:cond-mat/0309473 · doi:10.1103/PhysRevLett.92.098302
Abstract
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the semiconductor layer under external magnetic field, is described. The FM-S-FM structure is considered, which includes very thin heavily doped (delta-doped) layers at FM-S interfaces. At certain parameters the structure is highly sensitive at room-temperature to variations of the field with frequencies up to 100 GHz. The current oscillates with the field, and its relative amplitude is determined only by the spin polarizations of FM-S junctions at relatively large bias voltage.
5 pages, 2 figures, (v2) new plot with a dependence of current J on magnetic field H added in Fig.2 (top panel), minor amendments in the text; (v3) minor typos corrected. To appear in Phys. Rev. Letters
References in corpus (1)
Cited by in corpus (5)
- Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
- Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets
- Modeling for Semiconductor Spintronics
- Complete spin polarization of electrons in semiconductor layers and quantum dots
- Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current