activity
19952023
most citedGeneral Green's function formalism for transport calculations with spd-Hamiltonians and giant magnetoresistance in Co and Ni based magnetic multilayers

308 citations · 2.5k across the 63 of their papers we have counts for

collaborators

63 papers

physics.optics2023

Simple Analytical Model for Optimizing Integrating Sphere Port Sizes

A. M. Bratkovsky

The integrating sphere (IS) is an indispensable tool for measuring transmission and scattering of materials and their colorimetry, as well as other photometric tasks. The accuracy…

cond-mat.mes-hall2020★ 5 cited

Photoluminescence in PbS nanocrystal thin films: Nanocrystal density, film morphology and energy transfer

L. Tsybeskov, M. Alam, S. B. Hafiz +4

We show that photoluminescence properties of PbS nanocrystal thin films are directly related to film morphology and nanocrystal density. In densely packed PbS nanocrystal films, lo…

cond-mat.mes-hall2016

Plasmon-enhanced second harmonic generation in the laser-irradiated cubic metal nanoparticles

S. V. Fomichev, A. M. Bratkovsky

The plasmon-enhanced second harmonic generation in the subwavelength neutral metal cubic nanoparticles is calculated for the first time in the hydrodynamic and cold plasma approxim…

cond-mat.str-el2015★ 100 cited

Sequential Electronic and Structural Transitions in VO2 Observed Using X-ray Absorption Spectromicroscopy

Suhas Kumar, John Paul Strachan, Matthew D. Pickett +3

The popular dual electronic (Mott) and structural (Peierls) transitions in VO2 are explored using x-ray absorption spectromicroscopy with high spatial and spectral resolutions. It…

cond-mat.mes-hall2013

Perfect memristor: non-volatility, switching and negative differential resistance

Sergey E. Savel'ev, Fabio Marchesoni, Alexander M. Bratkovsky

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or…

cond-mat.mes-hall2011

Semiconducting graphene nanomeshes

I. I. Naumov, A. M. Bratkovsky

Symmetry arguments are used to describe all possible two-dimensional periodic corrugations of graphene ("nanomeshes") capable of inducing tangible semiconducting gap. Such nanomesh…