Molecular dynamics simulations of oxide memristors: thermal effects
arXiv:1012.5514 · doi:10.1007/s00339-011-6293-4
Abstract
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.
submit/0169777; 6 pages, 4 figures