Molecular dynamics simulations of oxide memory resistors (memristors)

Abstract

Reversible bipolar nano-switches that can be set and read electronically in a solid-state two-terminal device are very promising for applications. We have performed molecular-dynamics simulations that mimic systems with oxygen vacancies interacting via realistic potentials and driven by an external bias voltage. The competing short- and long-range interactions among charged mobile vacancies lead to density fluctuations and short-range ordering, while illustrating some aspects of observed experimental behavior, such as memristor polarity inversion.

15 pages, 5 figures

References in corpus (2)

• Phase change memory technology
• Strong resistance nonlinearity and third harmonic generation in the unipolar resistance switching of NiO thin films

Cited by in corpus (6)

• Memory effects in complex materials and nanoscale systems
• Phenomenological Modeling of Memristive Devices
• Drop-coated Titanium Dioxide Memristors
• Changing the state of a memristive system with white noise
• Towards synthetic neural networks: Can artificial electrochemical neurons be coupled with artificial memristive synapses?
• Molecular dynamics simulations of oxide memristors: crystal field effects