Drop-coated Titanium Dioxide Memristors

Abstract

The fabrication of memristors by drop-coating sol-gel Ti(OH)${}_4$ solution onto either aluminium foil or sputter-coated aluminium on plastic is presented. The gel layer is thick, 37$\mu$m, but both devices exhibit good memristance I-V profiles. The drop coated aluminium foil memristors compare favourably with the sputter-coated ones, demonstrating an expansion in the accessibility of memristor fabrication. A comparison between aluminium and gold for use as the sputter-coated electrodes shows that aluminium is the better choice as using gold leads to device failure. The devices do not require a forming step.

9 figures. arXiv admin note: substantial text overlap with arXiv:1106.6293

References in corpus (2)

• Observation, Characterization and Modeling of Memristor Current Spikes
• Does the D.C. Response of Memristors Allow Robotic Short-Term Memory and a Possible Route to Artificial Time Perception?

Cited by in corpus (4)

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