308 citations · 2.5k across the 63 of their papers we have counts for
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A class of spin injection-precession ultrafast nanodevices
V. V. Osipov, A. M. Bratkovsky
Spin valve ultrafast spin injection devices are described: an amplifier, a frequency multiplier, and a square-law detector. Their operation is based on injection of spin polarized…
High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins
A. M. Bratkovsky, V. V. Osipov
New mechanism of magnetoresistance, based on tunneling-emission of spin polarized electrons from ferromagnets (FM) into semiconductors (S) and precession of electron spin in the se…
Spin extraction from a non-magnetic semiconductor
A. M. Bratkovsky, V. V. Osipov
New efficient mechanism of obtaining spin polarization in_nonmagnetic_ semiconductors at arbitrary temperutures is described. The effect appears during tunneling of electrons from…
Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
V. V. Osipov, A. M. Bratkovsky
We suggest a consistent microscopic theory of spin injection from a ferromagnet (FM) into a semiconductor (S). It describes tunneling and emission of electrons through modified FM-…
Current rectification by simple molecular quantum dots: an ab-initio study
B. Larade, A. M. Bratkovsky
We calculate a current rectification by molecules containing a conjugated molecular group sandwiched between two saturated (insulating) molecular groups of different length (molecu…