Complete spin polarization of electrons in semiconductor layers and quantum dots
arXiv:cond-mat/0506670 · doi:10.1063/1.2128060
Abstract
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injection and extraction. The complete spin polarization is achieved if the thin layers or quantum dots are placed between two ferromagnetic metal contacts with moderate spin injection coefficients and antiparallel magnetizations. The sign of the spin polarization is determined by the direction of the current. Aplications of this effect in spintronics and quantum information processing are discussed.
References in corpus (11)
- Spintronics: Fundamentals and applications
- Theory of electrical spin injection: Tunnel contacts as a solution of the conductivity mismatch problem
- Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
- Spin-polarized transport in inhomogeneous magnetic semiconductors: theory of magnetic/nonmagnetic p-n junctions
- Spin diffusion and injection in semiconductor structures: Electric field effects
- An observation of spin-valve effects in a semiconductor field effect transistor: a novel spintronic device
- Electric-field dependent spin diffusion and spin injection into semiconductors
- A class of spin injection-precession ultrafast nanodevices
- Efficient nonlinear room-temperature spin injection from ferromagnets into semiconductors through a modified Schottky barrier
- High-frequency spin valve effect in ferromagnet-semiconductor-ferromagnet structure based on precession of injected spins