34 citations · 167 across the 13 of their papers we have counts for
13 papers
Complete spin polarization of degenerate electrons in semiconductors near ferromagnetic contacts
A. G. Petukhov, V. N. Smelyanskiy, V. V. Osipov
We show that spin polarization of electron density in nonmagnetic degenerate semiconductors can achieve 100%. This effect is realized in ferromagnet-semiconductor - ju…
Electronic Control and Readout of Qubit States in Solid State Quantum Computing Systems
A. G. Petukhov, V. V. Osipov, V. N. Smelyanskiy
We demonstrate that an junction is the most suitable candidate for electronic control and readout of qubit states in quantum computing systems based on shallow impuriti…
Complete spin polarization of electrons in semiconductor layers and quantum dots
V. V. Osipov, A. G. Petukhov, V. N. Smelyanskiy
We demonstrate that non-equilibrium electrons in thin nonmagnetic semiconductor layers or quantum dots can be fully spin polarized by means of simultaneous electrical spin injectio…
Complete spin extraction from semiconductors near ferromagnet-semiconductor interfaces
V. V. Osipov, V. N. Smelyanskiy, A. G. Petukhov
We show that spin polarization of electrons in nonmagnetic semiconductors near specially tailored ferromagnet-semiconductor junctions can achieve 100%. This effect is realized even…
Spin accumulation in degenerate semiconductors near modified Schottky contact with ferromagnets
V. V. Osipov, A. M. Bratkovsky
We study spin transport in forward and reverse biased junctions between a ferromagnetic metal and a degenerate semiconductor with a delta-doped layer near the interface at relative…
Highly polarized injection luminescence in forward-biased ferromagnetic-semiconductor junctions at low spin polarization of current
A. M. Bratkovsky, V. V. Osipov
We consider electron tunneling from a nonmagnetic -type semiconductor (-S) into a ferromagnet (FM) through a very thin forward-biased Schottky barrier resulting in efficient…