Quantum computing on long-lived donor states of Li in Si

Abstract

We predict a gigantically long lifetime of the first excited state of an interstitial lithium donor in silicon. The nature of this effect roots in the anomalous level structure of the {\em 1s} Li manifold under external stress. Namely, the coupling between the lowest two states of the opposite parity is very weak and occurs via intervalley phonon transitions only. We propose to use these states under the controlled ac and dc stress to process quantum information. We find an unusual form of the elastic-dipole interaction between %the electronic transitions in different donors. This interaction scales with the inter-donor distance $R$ as $R^{-3}$ or $R^{-5}$ for the transitions between the states of the same or opposite parity, respectively. The long-range $R^{-3}$ interaction provides a high fidelity mechanism for 2-qubit operations.

References in corpus (8)

• Quantum Computation with Quantum Dots
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• Atomically precise placement of single dopants in Si
• Decoherence and 1/f noise in Josephson qubits
• Charge-based quantum computing using single donors in semiconductors
• Optical RKKY Interaction between Charged Semiconductor Quantum Dots
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