Multiscale theory of valley splitting

Abstract

The coupling between $z$ valleys in the conduction band of a Si quantum well arises from phenomena occurring within several atoms from the interface, thus ruling out a theoretical description based on pure effective mass theory. However, the complexity and size of a realistic device precludes an analytical atomistic description. Here, we develop a fully analytical multiscale theory of valley coupling, by combining effective mass and tight binding approaches. The results are of particular interest for silicon qubits and quantum devices, but also provide insight for GaAs quantum wells.

4 pages, 2 figures

References in corpus (4)

• Controllable valley splitting in silicon quantum devices
• Valley Splitting Theory of SiGe/Si/SiGe Quantum Wells
• Spin and valley-orbit splittings in SiGe/Si heterostructures
• First-principles envelope-function theory for lattice-matched semiconductor heterostructures

Cited by in corpus (12)

• Silicon Quantum Electronics
• Intervalley coupling for interface-bound electrons in silicon: An effective mass study
• Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells
• Strong electron-electron interactions in Si/SiGe quantum dots
• Hybrid spin and valley quantum computing with singlet-triplet qubits
• Effective mass theory of monolayer δ-doping in the high-density limit
• Singlet-triplet relaxation in multivalley silicon single quantum dots
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Valley-Free Silicon Fins Caused by Shear Strain
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
• Theory of Valley Splitting in Si/SiGe Spin-Qubits: Interplay of Strain, Resonances and Random Alloy Disorder