Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots

Abstract

We study theoretically the phonon-induced relaxation and decoherence of spin states of two electrons in a lateral double quantum dot in a SiGe/Si/SiGe heterostructure. We consider two types of singlet-triplet spin qubits and calculate their relaxation and decoherence times, in particular as a function of level hybridization, temperature, magnetic field, spin orbit interaction, and detuning between the quantum dots, using Bloch-Redfield theory. We show that the magnetic field gradient, which is usually applied to operate the spin qubit, may reduce the relaxation time by more than an order of magnitude. Using this insight, we identify an optimal regime where the magnetic field gradient does not affect the relaxation time significantly, and we propose regimes of longest decay times. We take into account the effects of one-phonon and two-phonon processes and suggest how our theory can be tested experimentally. The spin lifetimes we find here for Si-based quantum dots are significantly longer than the ones reported for their GaAs counterparts.

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• Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot
• Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
• Phonon-induced decoherence of a charge quadrupole qubit
• Theory on electron-phonon spin dehphasing in GaAs multi-electron double quantum dots
• Inter- and intra-band Coulomb interactions between holes in silicon nanostructures
• Four-state discrimination for a pair of spin qubits via gate reflectometry