Quantum control of donor electrons at the Si-SiO2 interface

Abstract

Prospects for the quantum control of electrons in the silicon quantum computer architecture are considered theoretically. In particular, we investigate the feasibility of shuttling donor-bound electrons between the impurity in the bulk and the Si-SiO2 interface by tuning an external electric field. We calculate the shuttling time to range from sub-picoseconds to nanoseconds depending on the distance (~ 10-50 nm) of the donor from the interface. Our results establish that quantum control in such nanostructure architectures could, in principle, be achieved.

Version accepted for publication in PRL

References in corpus (16)

• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• Control and Detection of Singlet-Triplet Mixing in a Random Nuclear Field
• Triplet-Singlet Spin Relaxation via Nuclei in a Double Quantum Dot
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Charge-qubit operation of an isolated double quantum dot
• Charge-based quantum computing using single donors in semiconductors
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Hydrogenic Spin Quantum Computing in Silicon: A Digital Approach
• Quantum theory of spectral diffusion induced electron spin decoherence
• Single Spin Measurement using Single Electron Transistors to Probe Two Electron Systems
• Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon
• Measuring the decoherence rate in a semiconductor charge qubit
• Electric Field Control of Shallow Donor Impurities in Silicon
• Theory of the Stark Effect for P donors in Si
• Spin Readout and Initialization in a Semiconductor Quantum Dot
• Gate-induced ionization of single dopant atoms

Cited by in corpus (42)

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• Semiconductor Qubits In Practice
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• Physical mechanisms of interface-mediated intervalley coupling in Si
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
• Donor spins in silicon for quantum technologies
• Hybrid solid state qubits: the powerful role of electron spins
• Surface code architecture for donors and dots in silicon with imprecise and nonuniform qubit couplings
• Resonant tunnelling features in the transport spectroscopy of quantum dots
• Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
• Orbital Stark effect and quantum confinement transition of donors in silicon
• Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors
• External field control of donor electron exchange at the Si/SiO2 interface
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Engineered valley-orbit splittings in quantum confined nanostructures in silicon
• Exploring quantum chaos with a single nuclear spin
• Heterointerface effects on the charging energy of shallow D- ground state in silicon: the role of dielectric mismatch
• Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
• Lifetime enhanced transport in silicon due to spin and valley blockade
• Two-electron states of a group V donor in silicon from atomistic full configuration interaction
• Quantum control and manipulation of donor electrons in Si-based quantum computing
• Robust electric dipole transition at microwave frequencies for nuclear spin qubits in silicon
• Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Reliability of the Heitler-London approach for the exchange coupling between electrons in semiconductor nanostructures
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Mapping donor electron wave function deformations at sub-Bohr orbit resolution
• Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
• Valley interference effects on a donor electron close to a Si/SiO2 interface
• Impact of the valley degree of freedom on the control of donor electrons near a Si/SiO_2 interface
• Large-scale atomistic density functional theory calculations of phosphorus-doped silicon quantum bits
• Interface effects on acceptor qubits in silicon and germanium
• Single electron spin and its coherence in Si quantum computer architecture
• Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
• Cross-talk compensation of hyperfine control in donor qubit architectures
• Scanned single-electron probe inside a silicon electronic device
• Magnetic field-assisted manipulation and entanglement of Si spin qubits
• Exchange between deep donors in semiconductors: a quantum defect approach
• Spin relaxation of a donor electron coupled to interface states