Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

Abstract

The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.

4 pages, 4 figures

References in corpus (6)

• Coherent control of a single electron spin with electric fields
• Gate-controlled spin-orbit interaction in a parabolic GaAs/AlGaAs quantum well
• Quantum control of donor electrons at the Si-SiO2 interface
• Stark Tuning of Donor Electron Spins in Silicon
• All-electrical control of single ion spins in a semiconductor
• Multimillion Atom Simulations with NEMO 3-D

Cited by in corpus (28)

• Silicon Quantum Electronics
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Storing quantum information for 30 seconds in a nanoelectronic device
• Silicon quantum processor with robust long-distance qubit couplings
• Electrically controlling single spin qubits in a continuous microwave field
• Spatially Resolving Valley Quantum Interference of a Donor in Silicon
• Engineering inter-qubit exchange coupling between donor bound electrons in silicon
• Linear hyperfine tuning of donor spins in silicon using hydrostatic strain
• Electron spin coherence of shallow donors in natural and isotopically enriched germanium
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Network architecture for a topological quantum computer in silicon
• Spin-lattice relaxation times of single donors and donor clusters in silicon
• Quantum interferometry with a g-factor-tunable spin qubit
• Large Stark tuning of donor electron spin quantum bits in germanium
• Stark shift and field ionization of arsenic donors in ${}^{28}$Si-SOI structures
• Transport of Spin Qubits with Donor Chains under Realistic Experimental Conditions
• Valley-enhanced fast relaxation of gate-controlled donor qubits in silicon
• Manipulation of the Land$\acute{\text{e}}$ g-factor in InAs quantum dots through the application of anisotropic gate potentials: Exact diagonalization, numerical and perturbation methods
• Theory of single and two-qubit operations with donor-bound electron spins in germanium
• Anisotropic Stark Effect and Electric-Field Noise Suppression for Phosphorus Donor Qubits in Silicon
• Multi-qubit gates protected by adiabaticity and dynamical decoupling applicable to donor qubits in silicon
• Fast high-fidelity single-qubit gates for flip-flop qubits in silicon
• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Hyperfine-assisted fast electric control of dopant nuclear spins in semiconductors
• Measurements and atomistic theory of electron $g$ factor anisotropy for phosphorus donors in strained silicon
• Novel characterisation of dopant-based qubits
• Decoherence of Coupled Flip-Flop Qubits Due to Charge Noise
• Enhanced local addressability of a spin array with local exchange pulses and global microwave driving