Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field

Abstract

Shifts from the expected nuclear magnetic resonance frequencies of antimony and bismuth donors in silicon of greater than a megahertz are observed in electrically detected magnetic resonance spectra. Defects created by ion implantation of the donors are discussed as the source of effective electric field gradients generating these shifts via quadrupole interaction with the nuclear spins. The experimental results are modeled quantitatively by molecular orbital theory for a coupled pair consisting of a donor and a spin-dependent recombination readout center.

3 figures

References in corpus (12)

• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Coherence Time of a Solid-State Nuclear Qubit
• Stark Tuning of Donor Electron Spins in Silicon
• Bismuth in silicon qubits: the role of EPR cancellation resonances
• Hyperfine Stark effect of shallow donors in silicon
• Conditional control of donor nuclear spins in silicon using Stark shifts
• Interaction of Strain and Nuclear Spins in Silicon: Quadrupolar Effects on Ionized Donors
• Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination
• Pulsed Low-Field Electrically Detected Magnetic Resonance
• Quadrupolar Effects on Nuclear Spins of Neutral Arsenic Donors in Silicon
• Spin dependent recombination based magnetic resonance spectroscopy of bismuth donor spins in silicon at low magnetic fields
• Spin-dependent recombination at arsenic donors in ion-implanted silicon

Cited by in corpus (6)

• Donor spins in silicon for quantum technologies
• Strain-induced spin resonance shifts in silicon devices
• Exploring quantum chaos with a single nuclear spin
• Optical Control of Donor Spin Qubits in Silicon
• Zero field optical magnetic resonance study of phosphorus donors in 28-silicon
• Multiple-quantum transitions and charge-induced decoherence of donor nuclear spins in silicon