Electrically Detected Double Electron-Electron Resonance: Exchange Interaction of 31P Donors and Pb0 Defects at the Si/SiO2 Interface

Abstract

We study the coupling of Pb0 dangling bond defects at the Si/SiO2 interface and 31P donors in an epitaxial layer directly underneath using electrically detected double electron-electron resonance (EDDEER). An exponential decay of the EDDEER signal is observed, which is attributed to a broad distribution of exchange coupling strengths J/2pi from 25 kHz to 3 MHz. Comparison of the experimental data with a numerical simulation of the exchange coupling shows that this range of coupling strengths corresponds to 31P-Pb0 distances ranging from 14 nm to 20 nm.

6 pages, 5 figures

References in corpus (5)

• Electrical detection of 31P spin quantum states
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Electrical detection of spin echoes for phosphorus donors in silicon
• Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers

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• Quadrupole Shift of Nuclear Magnetic Resonance of Donors in Silicon at Low Magnetic Field
• Optical dependence of electrically-detected magnetic resonance in lightly-doped Si:P devices