Electrical detection of 31P spin quantum states

Abstract

In recent years, a variety of solid-state qubits has been realized, including quantum dots, superconducting tunnel junctions and point defects. Due to its potential compatibility with existing microelectronics, the proposal by Kane based on phosphorus donors in Si has also been pursued intensively. A key issue of this concept is the readout of the P quantum state. While electrical measurements of magnetic resonance have been performed on single spins, the statistical nature of these experiments based on random telegraph noise measurements has impeded the readout of single spin states. In this letter, we demonstrate the measurement of the spin state of P donor electrons in silicon and the observation of Rabi flops by purely electric means, accomplished by coherent manipulation of spin-dependent charge carrier recombination between the P donor and paramagnetic localized states at the Si/SiO2 interface via pulsed electrically detected magnetic resonance. The electron spin information is shown to be coupled through the hyperfine interaction with the P nucleus, which demonstrates the feasibility of a recombination-based readout of nuclear spins.

References in corpus (4)

• Single-shot read-out of an individual electron spin in a quantum dot
• Electrically-detected magnetic resonance in ion-implanted Si:P nanostructures
• Transport and recombination through weakly coupled localized spin pairs in semiconductors during coherent spin excitation
• Spin-dependent recombination - an electronic readout mechanism for solid state quantum computers

Cited by in corpus (14)

• Solid state quantum memory using the 31P nuclear spin
• Dangling-bond spin relaxation and magnetic 1/f noise from the amorphous-semiconductor/oxide interface: Theory
• Room Temperature Electrical Detection of Spin Coherence in C60
• Electrical detection of spin echoes for phosphorus donors in silicon
• Long spin coherence in silicon with an electrical spin trap readout
• External field control of donor electron exchange at the Si/SiO2 interface
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Quantum non-demolition measurements of single donor spins in semiconductors
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Spin-dependent scattering in a silicon transistor
• A Non-Demolition Single Spin Meter
• Single electron spin and its coherence in Si quantum computer architecture
• Electrically detected magnetic resonance using radio-frequency reflectometry
• Spin echo without an external permanent magnetic field