Passivation and characterization of charge defects in ambipolar silicon quantum dots

Abstract

In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al${}_2$O${}_3$ overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of ~10 meV in both the positive and negative charge state.

arXiv comment9 pages, 4 figures, supplementary information

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• A fabrication guide for planar silicon quantum dot heterostructures
• Simulation of 1/f charge noise affecting a quantum dot in a Si/SiGe structure
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
• Single-charge occupation in ambipolar quantum dots
• Depletion-mode Quantum Dots in Intrinsic Silicon