Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Abstract

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $\mu$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.

arXiv comment5 pages, 4 figures

References in corpus (28)

• Quantum Computation with Quantum Dots
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A CMOS silicon spin qubit
• Quantum transport in carbon nanotubes
• Fidelity benchmarks for two-qubit gates in silicon
• Fast two-qubit logic with holes in germanium
• Ge hole spin qubit
• Electron-hole symmetry in a semiconducting carbon nanotube quantum dot
• Silicon qubit fidelities approaching incoherent noise limits via pulse engineering
• Rapid high-fidelity gate-based spin read-out in silicon
• Gate-based single-shot readout of spins in silicon
• Electron-Hole Crossover in Graphene Quantum Dots
• Valley-spin blockade and spin resonance in carbon nanotubes
• Fast charge sensing of a cavity-coupled double quantum dot using a Josephson parametric amplifier
• Electrically driven electron spin resonance mediated by spin-valley-orbit coupling in a silicon quantum dot
• Spin states of the first four holes in a silicon nanowire quantum dot
• Fast gate-based readout of silicon quantum dots using Josephson parametric amplification
• Radio-frequency capacitive gate-based sensing
• Single-shot single-gate RF spin readout in silicon
• Vibration-induced electrical noise in a cryogen-free dilution refrigerator: characterization, mitigation, and impact on qubit coherence
• Large dispersive interaction between a CMOS double quantum dot and microwave photons
• Primary thermometry of a single reservoir using cyclic electron tunneling in a CMOS transistor
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Remote capacitive sensing in two-dimension quantum-dot arrays
• Ambipolar quantum dots in intrinsic silicon
• Electrons and holes in Si quantum well: a room-temperature transport and drag resistance study
• Single-charge occupation in ambipolar quantum dots

Cited by in corpus (6)

• Probing quantum devices with radio-frequency reflectometry
• Supporting quantum technologies with an ultra-low loss silicon photonics platform
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• An ambipolar single-charge pump in silicon