Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Abstract

We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $\mu$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon.

5 pages, 4 figures

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Cited by in corpus (6)

• Probing quantum devices with radio-frequency reflectometry
• Supporting quantum technologies with an ultra-low loss silicon photonics platform
• Electrical operation of hole spin qubits in planar MOS silicon quantum dots
• Scalable on-chip multiplexing of silicon single and double quantum dots
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• An ambipolar single-charge pump in silicon