Remote capacitive sensing in two-dimension quantum-dot arrays
arXiv:2005.14712 · doi:10.1021/acs.nanolett.0c02393
Abstract
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 22 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure.
arXiv comment9 pages, 3 figures, 35 cites and supplementary
References in corpus (25)
- Electron transport through double quantum dots
- A >99.9%-fidelity quantum-dot spin qubit with coherence limited by charge noise
- Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
- A CMOS silicon spin qubit
- Quantum CNOT Gate for Spins in Silicon
- Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
- Silicon CMOS architecture for a spin-based quantum computer
- Fidelity benchmarks for two-qubit gates in silicon
- Double quantum dot with integrated charge sensor based on Ge/Si heterostructure nanowires
- Scalable gate architecture for densely packed semiconductor spin qubits
- A Crossbar Network for Silicon Quantum Dot Qubits
- Natural two-qubit gate for quantum computation using the XY interaction
- Long-Range Microwave Mediated Interactions Between Electron Spins
- A high-sensitivity gate-based charge sensor in silicon
- Electron-nuclear interaction in 13C nanotube double quantum dots
- Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
- Loading a quantum-dot based "Qubyte" register
- Integrated silicon qubit platform with single-spin addressability, exchange control and robust single-shot singlet-triplet readout
- Controlling spin-orbit interactions in silicon quantum dots using magnetic field direction
- Long-distance spin-spin coupling via floating gates
- A logical qubit in a linear array of semiconductor quantum dots
- Fast spin exchange between two distant quantum dots
- Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
- Measurements of capacitive coupling within a quadruple quantum dot array
- A Silicon Surface Code Architecture Resilient Against Leakage Errors
Cited by in corpus (16)
- Scaling silicon-based quantum computing using CMOS technology: State-of-the-art, Challenges and Perspectives
- Review of performance metrics of spin qubits in gated semiconducting nanostructures
- Probing quantum devices with radio-frequency reflectometry
- Single-electron control in a foundry-fabricated two-dimensional qubit array
- Universal control of four singlet-triplet qubits
- A two-dimensional array of single-hole quantum dots
- Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
- Single-shot readout of multiple donor electron spins with a gate-based sensor
- Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
- A quantum dot-based frequency multiplier
- Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning
- Gate reflectometry in dense quantum dot arrays
- An elongated quantum dot as a distributed charge sensor
- Quantum estimation and remote charge sensing with a hole-spin qubit in silicon
- A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
- Single electron routing in a silicon quantum-dot array