Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Abstract

We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.

arXiv comment6+5 pages, 6 figures

References in corpus (33)

• Single-shot read-out of an individual electron spin in a quantum dot
• NMR Techniques for Quantum Control and Computation
• Silicon Quantum Electronics
• Randomized Benchmarking of Quantum Gates
• A Two Qubit Logic Gate in Silicon
• Prescription for experimental determination of the dynamics of a quantum black box
• Robust randomized benchmarking of quantum processes
• A programmable two-qubit quantum processor in silicon
• Interfacing spin qubits in quantum dots and donors - hot, dense and coherent
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Qubit architecture with high coherence and fast tunable coupling
• Quantum CNOT Gate for Spins in Silicon
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Quantum process tomography of a controlled-NOT gate
• Characterizing Quantum Gates via Randomized Benchmarking
• Efficient measurement of quantum gate error by interleaved randomized benchmarking
• Characterization of addressability by simultaneous randomized benchmarking
• Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation
• Self-Consistent Quantum Process Tomography
• Symmetrised Characterisation of Noisy Quantum Processes
• Randomized benchmarking and process tomography for gate errors in a solid-state qubit
• Noise suppression using symmetric exchange gates in spin qubits
• A fault-tolerant addressable spin qubit in a natural silicon quantum dot
• Process verification of two-qubit quantum gates by randomized benchmarking
• Randomized Benchmarking of Multi-Qubit Gates
• What randomized benchmarking actually measures
• Efficient C-Phase gate for single-spin qubits in quantum dots
• Gatemon Benchmarking and Two-Qubit Operation
• Randomized benchmarking with gate-dependent noise
• Scalable randomized benchmarking of non-Clifford gates
• Real Randomized Benchmarking
• Simultaneous Spin-Charge Relaxation in Double Quantum Dots
• From randomized benchmarking experiments to gateset circuit fidelity: how to interpret randomized benchmarking decay parameters

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• Hybrid superconductor-semiconductor systems for quantum technology
• Fabrication process and failure analysis for robust quantum dots in silicon
• Two-body Wigner molecularization in asymmetric quantum dot spin qubits
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• Towards early fault tolerance on a 2$\times$N array of qubits equipped with shuttling
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• Spin-Valley Qubit Dynamics In Exchange Coupled Silicon Quantum Dots
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• Modelling of spin decoherence in a Si hole qubit perturbed by a single charge fluctuator
• Valley-Free Silicon Fins Caused by Shear Strain
• Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits
• Single-tone pulse sequences and robust two-tone shaped pulses for three silicon spin qubits with always-on exchange
• Robust implementation of quantum gates despite always-on exchange coupling in silicon double quantum dots
• Error channels in quantum nondemolition measurements on spin systems
• Designing arbitrary single-axis rotations robust against perpendicular time-dependent noise
• Exact analytical treatment of multiqubit noisy dynamics in exchange-coupled semiconductor spin qubits
• Fidelity of a sequence of SWAP operations on a spin chain
• Estimation of correlations and non-separability in quantum channels via unitarity benchmarking
• Scalable fast benchmarking for individual quantum gates with local twirling
• Tailoring potentials by simulation-aided design of gate layouts for spin qubit applications
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• Resonator-mediated quantum gate between distant charge qubits
• Pursuing high-fidelity control of spin qubits in natural Si/SiGe quantum dot
• Theory of superconducting proximity effect in hole-based hybrid semiconductor-superconductor devices
• A practical guide for building superconducting quantum devices
• Decoherence in Exchange-Coupled Quantum Spin Qubit Systems: Impact of Multiqubit Interactions and Geometric Connectivity
• Density dependence of the excitation gaps in an undoped Si/SiGe double-quantum-well heterostructure
• A generalized model of the noise spectrum of a two-level fluctuator in the presence of an electron subbath
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• Effects of leakage on the realization of a discrete time crystal in a chain of singlet-triplet qubits
• Switchable spin-photon coupling with hole spins in single-quantum dots