Split-Gate Cavity Coupler for Silicon Circuit Quantum Electrodynamics

Abstract

Coherent charge-photon and spin-photon coupling has recently been achieved in silicon double quantum dots (DQD). Here we demonstrate a versatile split-gate cavity-coupler that allows more than one DQD to be coupled to the same microwave cavity. Measurements of the cavity transmission as a function of level detuning yield a charge cavity coupling rate $g_c/2\pi$ = 58 MHz, charge decoherence rate ${\gamma }_c/2\pi$ = 36 MHz, and cavity decay rate $\kappa /2\pi$ = 1.2 MHz. The charge cavity coupling rate is in good agreement with device simulations. Our coupling technique can be extended to enable simultaneous coupling of multiple DQDs to the same cavity mode, opening the door to long-range coupling of semiconductor qubits using microwave frequency photons.

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• Spin digitizer for high-fidelity readout of a cavity-coupled silicon triple quantum dot
• Probing the Spatial Variation of the Inter-Valley Tunnel Coupling in a Silicon Triple Quantum Dot
• Resonant Exchange Operation in Triple-Quantum-Dot Qubits for Spin-Photon Transduction
• Modulated longitudinal gates on encoded spin-qubits via curvature couplings to a superconducting cavity
• Robust photon-mediated entangling gates between quantum dot spin qubits
• Coupling of hole double quantum dot in planar germanium to a microwave cavity
• Optimal control of a cavity-mediated iSWAP gate between silicon spin qubits
• Developing high-impedance superconducting resonators and on-chip filters for semiconductor quantum dot circuit quantum electrodynamics
• Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands
• Universal control of superexchange in linear triple quantum dots with an empty mediator
• Sign-switching of superexchange mediated by few electrons under non-uniform magnetic field