153 citations · 624 across the 21 of their papers we have counts for
22 papers
Rapid Charge Stability Diagram Generation from Device-level Modeling of Semiconductor Quantum Dots
Ron Nodel, David W. Kanaar, Connor Nasseraddin +5
Self-consistent Schrödinger-Poisson calculations are a powerful tool for predicting the behavior of layered semiconductor quantum dot devices. However, characterization of charge s…
Gate Control of g-factor in Germanium Quantum Dots: A Strain-Based Explanation
Mu Niu, Adrian Culver, Johnathan Bryan +3
The g-factor is a key parameter governing the behavior of semiconductor spin qubits, as it directly determines the qubit frequency and its sensitivity to electrical and magnetic no…
Silicon-Germanium Heterostructures with Enhanced Valley Splitting for Spin Qubits
David W. Kanaar, Efrain Martinez, Peihong Zhang +1
Achieving valley splittings well in excess of the thermal energy of electrons and avoiding valley excitations is essential for the consistent initialization, operation and readout…
Fast charge noise sensing using a spectator valley state in a singlet-triplet qubit
David W. Kanaar, Yasuo Oda, Mark F. Gyure +1
Semiconductor spin qubits are a promising platform for quantum computing but remain vulnerable to charge noise. Accurate, in situ measurement of charge noise could enable closed-lo…
Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
Efe Cakar, H. Ekmel Ercan, Gordian Fuchs +4
A detailed understanding of the material properties that affect the splitting between the two low-lying valley states in Si/SiGe heterostructures will be increasingly important as…
Proposed real-time charge noise measurement via valley state reflectometry
David W. Kanaar, H. Ekmel Ercan, Mark F. Gyure +1
We theoretically propose a method to perform in situ measurements of charge noise during logical operations in silicon quantum dot spin qubits. Our method does not require ancillar…