High-precision real-space simulation of electrostatically-confined few-electron states

Abstract

In this paper we present a computational procedure that utilizes real-space grids to obtain high precision approximations of electrostatically confined few-electron states such as those that arise in gated semiconductor quantum dots. We use the Full Configuration Interaction (FCI) method with a continuously adapted orthonormal orbital basis to approximate the ground and excited states of such systems. We also introduce a benchmark problem based on a realistic analytical electrostatic potential for quantum dot devices. We show that our approach leads to highly precise computed energies and energy differences over a wide range of model parameters. The analytic definition of the benchmark allows for a collection of tests that are easily replicated, thus facilitating comparisons with other computational approaches.

8 pages, 4 figures

References in corpus (3)

• Full configuration interaction approach to the few-electron problem in artificial atoms
• Validity of the single-particle description and charge noise resilience for multielectron quantum dots
• Effect of the Coulomb interaction on the electron relaxation of weakly-confined quantum dot systems

Cited by in corpus (12)

• Semiconductor Spin Qubits
• Jellybean quantum dots in silicon for qubit coupling and on-chip quantum chemistry
• Coherent control of a triangular exchange-only spin qubit
• Lattice deformation at the sub-micron scale: X-ray nanobeam measurements of elastic strain in electron shuttling devices
• Path integral simulation of exchange interactions in CMOS spin qubits
• Valley Splitting Correlations Across a Silicon Quantum Well Containing Germanium
• Theory of charge stability diagrams in coupled quantum dot qubits
• Ab initio modelling of quantum dot qubits: Coupling, gate dynamics and robustness versus charge noise
• Towards Utilizing Scanning Gate Microscopy as a High-Resolution Probe of Valley Splitting in Si/SiGe Heterostructures
• Bootstrapping, autonomous testing, and initialization system for Si/Si${}_x$Ge${}_{1-x}$ multi-quantum-dot devices
• Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells
• Dressed basis sets for the modeling of exchange interactions in double quantum dots